Mathematical modeling in materials science of electronic components | IV International сonference

IV International сonference

Mathematical modeling in materials science of electronic components

FRC CSC RAS, CMC MSU, MERI

OCT

24-25

2022

Conference Proceedings

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Link to the online conference

The conference will be held online and offline at Vavilov st. 40, Conference Room (3rd level), Moscow, Russia on October 24-25, 2022.

Link to the online conference will be sent to registered participants

To take part in the conference, Participant must send an abstract and filled submission form to matmodel2013@gmail.com until October 15.

To attend the conference as a listener, Participant must register by sending submission form until October 21.

Authors presenting their work at conference are cordially invited to contribute an Original Paper or Topical Review to the Conference Proceedings, sending the text and filled submission form and a document confirming the possibility of publishing in open press to the e-mail address matmodel2013@gmail.com

The publication must reflect the relevance, novelty, purpose, procedure and research results, conclusions. The text of the publication must include the title, short annotation and keywords.

Example (in Russian).

Texts of articles for publication in journals should be sent for review before November 1.

Abstracts and full-text articles are accepted in Microsoft Word format. Abstract should be up to three full pages of A4. The article should be 6-7 pages. Design rules: margins on all sides 25 mm, font Times New Roman, size 12pt, one line and a half spacing. Formulas should be typed in Microsoft Equation or MathType.

Template for poster section.

The admission fee for participants from Russia and the CIS is 4,800 rubles (including VAT 750 rubles), for post graduate students and accompanying persons — 3000 rubles (including VAT 500 rubles), students from the registration fee are exempt. For full-time participants who pay for participation from personal funds, the amount of all payments is reduced by the value of VAT. Payment in the case of absentee participation includes the cost of publishing the abstracts of a single report in the conference proceedings and amounts to 2,400 rubles (including VAT 400 rubles) for all categories of participants.

The admission fee must be payed before October 22. Payment details (in Russian):

Получатель:
ООО «Интеллектуальное кольцо»
ИНН/КПП 5047149206/504701001

Р/с 40702810200020002847 в ПАО АКБ "АВАНГАРД", Г. МОСКВА
К/с 30101810000000000201
БИК 044525201

Назначение платежа:
За участие в конференции МММЭК-2022. НДС не облагается.

To conclude a contract, write to:
la-mmmek21@intring.ru

Organizers:

  • FRC «Computer Science and Control» RAS
  • CMC MSU (Moscow State University Faculty of Computational Mathematics and Cybernetics)
  • MERI (Molecular Electronics Research Institute)
  • Scientific Council of the Russian Academy of Sciences "Fundamental problems of the element base of information-computational and control systems and materials for their creation"
  • Consortium "Perspective materials and element base of information and computing systems"

Archive

I International сonference. Mathematical modeling in materials science of electronic components (2019)

II International сonference. Mathematical modeling in materials science of electronic components (2020)

III International сonference. Mathematical modeling in materials science of electronic components (2021)

The release of the Conference Materials is planned, with placement in the RSCI and assignment of DOI.

The best works will be published in a special issue of the journal Izvestiya Vuzov. Materials of electronic equipment for 2022 (VAK). Articles submitted before September 1 will be published in issue 3. Articles sent later will be published in issue 4.

Some of them will be published in Russian Microelectronics and Phys.st.sol. (B) journals (WoS, Scopus).

Conference topics

1Modern problems in producing a research infrastructure for the synthesis of novel materials with desired properties, including the use of new methods and tools for analyzing big data
Problems in the material science development of quantum electronic heterostructures.2
3Mathematical modeling in structural materials science (multi-level, multi-scale models, simulation models, etc.)
Simulation of various (dimensional, radiation, surface and etc.) defects in semiconductor electronics.4
5Simulation the operation modes of multi-level memory elements for next-generation information processing systems.
Modeling the structure of composite materials and their properties with various (nanocrystals, nanoclusters, nano-amorphous and etc.) inclusions.6
7Problems of ensuring the reliability of electronic components of microelectronics and systems based on it.

Invited Speakers

Prof. Dr. Sobolev N.A., University of Aveiro, Portugal

Corresponding Member RAS Dvurechenskii A.V., Rzhanov Institute of Semiconductor Physics SB RAS

Prof. Dr. Vasilevskiy M.I., University of Minho, Portugal

Prof. Dr. Petrov P., Imperial Colledge London, Great Britain

Scientific programme of events

October 24

Registration

Opening

Plenary session

Section A. Modern problems of creating a research infrastructure for the synthesis of new materials with desired properties, including the use of new methods and tools for analyzing big data

Section E. Work of multi-level memory elements modeling for next-generation computers

October 25

Section C. Mathematical modeling in structural materials science (multilevel models, multiscale models, simulation models etc.)

Section D. Modeling of dimensional, radiation, surface and another defects in semiconductor electronics

Section B. Problems of the development of materials science of quantum electronic heterostructures

Section F. Structures and properties of composite materials modeling with nanocrystals, nanoclusters, nano-amorphous inclusions, etc.

Section G. Problems of ensuring the reliability of electronic components of microelectronics and systems based on it

Conference closing

Posters

Section A.

Section B.

Section C.

Section D.

Section F.

Program Committee

Chair:

Academician RAS Evtushenko Y.G., FRC CSC RAS, Moscow, Russia

Co-chair:

Doctor of Physical and Mathematical Sciences Abgaryan K.K., FRC CSC RAS, Moscow, Russia

Program Committee:

Academician RAS Sokolov I.A., FRC CSC RAS, Moscow, Russia

Doctor of Technical Sciences Zatsarinny A.A., FRC CSC RAS, Moscow, Russia

Academician RAS Krasnikov G.Y., JSC MERI, Zelenograd, Russia

Corresponding Member RAS Lukichev V.F., PTIAS RAS, Moscow, Russia

Corresponding Member RAS Flerov Y.A., FRC CSC RAS, Moscow, Russia

Corresponding Member RAS Pospelov I.G., FRC CSC RAS, Moscow, Russia

Corresponding Member RAS Kveder V.V., ISSP RAS, Chernogolovka, Russia

Doctor of Technical Sciences Gamkrelidze S.A., IUHFSE RAS, Moscow, Russia

Corresponding Member RAS Dvurechenskii A.V., ISP SO RAS, Novosibirsk, Russia

Prof. Dr. Sobolev N.A., University of Aveiro, Portugal

Doctor of Physical and Mathematical Sciences Reviznikov D.L., MAI, Moscow, Russia

Doctor of Physical and Mathematical Sciences Ilyushin A.S., MSU, Faculty of Physics, Moscow, Russia

Corresponding Member RAS Gornev E.S., JSC MERI, Zelenograd, Russia

Doctor of Physical and Mathematical Sciences Italyantsev A.G., JSC MERI, Zelenograd, Russia

Doctor of Physical and Mathematical Sciences Tishkin V.F., IAM RAS, Moscow, Russia

Doctor of Technical Sciences Zakharov V.N., FRC CSC RAS, Moscow, Russia

Professor Doctor Kotomin E., Max Planck Institute for Solid State Research, Stuttgart, Germany, Institute of Solid State Physics, University of Latvia, Riga, Latvia

Organizing Committee

Chair:

Doctor of Technical Sciences Zatsarinny A.A., FRC CSC RAS, Moscow, Russia

Co-chair:

Doctor of Physical and Mathematical Sciences Abgaryan K.K., FRC CSC RAS, Moscow, Russia

Organizing Committee:

Doctor of Technical Sciences Kharchenko V.A., FRC CSC RAS, Moscow, Russia

Ph.D., Physical and Mathematical Sciences Kolbin I.S., FRC CSC RAS, Moscow, Russia

Prof. Dr. Mendes H.F., University of Aveiro, Portugal

Ph.D., Physical and Mathematical Sciences Bazhanov D.I., MSU, Faculty of Physics, Moscow, Russia

Ph.D., Technical Sciences Telminov O.A., JSC MERI, Zelenograd, Russia

Ph.D., Technical Sciences Stepchenkov Y.A., FRC CSC RAS, Moscow, Russia

Ph.D., Physical and Mathematical Sciences Mutigullin I.V., FRC CSC RAS, Moscow, Russia

Ph.D., Physical and Mathematical Sciences Zanaveskin M.L., NRC "Kurchatov Institute", Moscow, Russia

Gavrilov E.S., MAI, Moscow, Russia

Uvarov S.I., FRC CSC RAS, Moscow, Russia

Secretariat of the Organizing Committee:

Uvarova O.V., FRC CSC RAS, Moscow, Russia

Sechenyh P.A., FRC CSC RAS, Moscow, Russia