I International сonference

Mathematical modeling in materials science of electronic components

FRC CSC RAS, MERI, MAI

Saved verison from ccas.ru

OCT

21-23

2019

Conference Proceedings

Download

Authors presenting their work at IWAMO 2019 are cordially invited to contribute an Original Paper or Topical Review to the Conference Proceedings, sending the text and filled submission form to the e-mail address matmodel2013@gmail.com

Abstracts should be sent for review before September 27.

Texts of articles for publication in journals should be sent for review before October 10.

Abstracts and full-text articles are accepted in Microsoft Word format. Abstract should be up to three full pages of A4. The article should be 6-7 pages. Design rules: margins on all sides 25 mm, font Times New Roman, size 12pt, one and a half line spacing. Formulas should be typed in Microsoft Equation or MathType.

Template for poster section.

Participants should send their registration data to the e-mail address matmodel2013@gmail.com before October 20.

The conference will take place on October 21-23, 2019.

Conference venue: Vavilov st. 40, Moscow, Russia

Organizers:

The release of the Conference Materials is planned, with placement in the RSCI. The best works will be published in a special issue of the journal Izvestiya Vuzov. Materials of electronic equipment for 2019 (VAK).

Some of them will be published in Russian Microelectronics and Phys.st.sol. (B) journals (WoS, Scopus).

Conference topics

1Modern problems in producing a research infrastructure for the synthesis of novel materials with desired properties, including the use of new methods and tools for analyzing big data
Problems in the material science development of quantum electronic heterostructures.2
3Mathematical modeling in structural materials science (multi-level, multi-scale models, simulation models, etc.)
Simulation of various (dimensional, radiation, surface and etc.) defects in semiconductor electronics.4
5Simulation the operation modes of multi-level memory elements for next-generation information processing systems.
Modeling the structure of composite materials and their properties with various (nanocrystals, nanoclusters, nano-amorphous and etc.) inclusions.6

Invited Speakers

Prof. Dr. Sobolev N.A., University of Aveiro, Portugal

Prof. Dr. Pedro J.C., University of Aveiro, Portugal

Corresponding Member RAS Dvurechenskii A.V., Rzhanov Institute of Semiconductor Physics SB RAS

Prof. Dr. Vasilevskiy M.I., University of Minho, Portugal

Dr. Schliwa A., Technische Universitaet Berlin, Germany

Scientific programme of events

October 21

Registration

Opening

Plenary session

Section A. Modern problems of creating a research infrastructure for the synthesis of new materials with desired properties, including the use of new methods and tools for analyzing big data

Section B. Problems of the development of materials science of quantum electronic heterostructures

Program

October 22

Section C. Mathematical modeling in structural materials science (multilevel models, multiscale models, simulation models etc.)

Section D. Modeling of dimensional, radiation, surface and another defects in semiconductor electronics

Junior section

Poster section

Program

October 23

Section E. Work of multi-level memory elements modeling for next-generation computers

Section F. Structures and properties of composite materials modeling with nanocrystals, nanoclusters, nano-amorphous inclusions, etc.

Conference closing

Program

Program Committee

Chair:

Academician RAS Evtushenko Y.G., FRC CSC RAS, Moscow, Russia


Vice-chair:

Doctor of Physical and Mathematical Sciences Abgaryan K.K., FRC CSC RAS, Moscow, Russia


Program Committee:

Academician RAS Sokolov I.A., FRC CSC RAS, Moscow, Russia

Doctor of Technical Sciences Zatsarinny A.A., FRC CSC RAS, Moscow, Russia

Academician RAS Krasnikov G.Y., JSC MERI, Zelenograd, Russia

Corresponding Member RAS Lukichev V.F., PTIAS RAS, Moscow, Russia

Corresponding Member RAS Flerov Y.A., FRC CSC RAS, Moscow, Russia

Corresponding Member RAS Pospelov I.G., FRC CSC RAS, Moscow, Russia

Corresponding Member RAS Kveder V.V., ISSP RAS, Chernogolovka, Russia

Doctor of Technical Sciences Gamkrelidze S.A., IUHFSE RAS, Moscow, Russia

Corresponding Member RAS Dvurechenskii A.V., ISP SO RAS, Novosibirsk, Russia

Prof. Dr. Sobolev N.A., University of Aveiro, Portugal

Doctor of Physical and Mathematical Sciences Reviznikov D.L., MAI, Moscow, Russia

Doctor of Physical and Mathematical Sciences Ilyushin A.S., MSU, Faculty of Physics, Moscow, Russia

Doctor of Technical Sciences Gornev E.S., JSC MERI, Zelenograd, Russia

Doctor of Physical and Mathematical Sciences Italyantsev A.G., JSC MERI, Zelenograd, Russia

Doctor of Physical and Mathematical Sciences Tishkin V.F., IAM RAS, Moscow, Russia

Doctor of Technical Sciences Zakharov V.N., FRC CSC RAS, Moscow, Russia

Professor Doctor Kotomin E., Max Planck Institute for Solid State Research, Stuttgart, Germany, Institute of Solid State Physics, University of Latvia, Riga, Latvia

Organizing Committee

Chair:

Doctor of Technical Sciences Zatsarinny A.A., FRC CSC RAS, Moscow, Russia


Vice-chair:

Doctor of Physical and Mathematical Sciences Abgaryan K.K., FRC CSC RAS, Moscow, Russia


Organizing Committee:

Doctor of Technical Sciences Kharchenko V.A., FRC CSC RAS, Moscow, Russia

Ph.D., Physical and Mathematical Sciences Kolbin I.S., FRC CSC RAS, Moscow, Russia

Prof. Dr. Mendes H.F., University of Aveiro, Portugal

Ph.D., Physical and Mathematical Sciences Bazhanov D.I., MSU, Faculty of Physics, Moscow, Russia

Ph.D., Technical Sciences Telminov O.A., JSC MERI, Zelenograd, Russia

Ph.D., Technical Sciences Stepchenkov Y.A., FRC CSC RAS, Moscow, Russia

Ph.D., Physical and Mathematical Sciences Mutigullin I.V., FRC CSC RAS, Moscow, Russia

Ph.D., Physical and Mathematical Sciences Zanaveskin M.L., NRC "Kurchatov Institute", Moscow, Russia

Gavrilov E.S., MAI, Moscow, Russia

Uvarov S.I., FRC CSC RAS, Moscow, Russia


Secretariat of the Organizing Committee:

Uvarova O.V., FRC CSC RAS, Moscow, Russia

Sechenyh P.A., FRC CSC RAS, Moscow, Russia